工業技術研究院

技術簡介

本技術是一種以非真空方式進行吸收層硫化的方法，是將漿料塗佈於前驅物上，在惰性氣氛中經過適當溫度之熱處理後，形成化合物薄膜太陽電池吸收層。本技術優點在於濕式塗佈法於大面積前驅物上成膜均勻性高，使大面積化製程及模組放大更具可行性。此外，以非真空塗佈材料利用率高，並且製程簡單，有助於降低生產成本。

Abstract

Cu(In,Ga)(Se,S)2 -based solar cells have the greatest potential for photovoltaic due to high conversion efficiency and low-cost technology. The adjustment of material bandgap in the CIGS absorbers is considered as a key factor to improve conversion efficiency. An approach to increase Voc is forming a wide-bandgap CIGSS surface layer on CIGS structure. One of the most successful technologies to produce CIGSS surface layer is through a sulfurization process with highly active H2S gas. However, the use of toxic H2S is undesirable due to its high cost and safety issues. Furthermore, the CIGSS layer is not uniform when the gas is non-uniformly distributed in the reaction chamber. This study demonstrates a new method to uniformly sulfurize the surface of CIGS by sulfur-contained slurry for improving the performance of CIGS solar cells.

技術規格

本技術是一種以非真空方式進行吸收層硫化的方法，材料利用率高，並且製程簡單，有助於降低生產成本。

Technical Specification

This approach demonstrates a new method to uniformly sulfurize the surface of CIGS by sulfur-contained slurry for improving the performance of CIGS solar cells.

技術特色

非真空塗佈材料利用率高

應用範圍

太陽能電池、塗佈設備

接受技術者具備基礎建議（設備）

太陽電池或半導體相關經驗

接受技術者具備基礎建議（專業）

太陽電池或半導體相關經驗

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