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工業技術研究院

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技術名稱: 平面光波導製程技術

技術簡介

平面光波導技術(PLC)是運用半導體製程來大量製作功能複雜的機體光學元件的技術,可符合未來輕薄短小及低成本的趨勢,特別是在DWDM光通訊元件的製作技術上,平面光波導已逐漸成為未來光通訊元件的主導技術,而國內業界對此項技術尚處萌芽階段。高品質的折射率及尺寸控制是平面光波導技術的關鍵,本製程技術採用電漿輔助化學氣相沉積法(Plasma-Enhanced Chemical Vapor Deposition),目前已建立基底層(Bottom Cladding)沉積技術外以及核心層(Core layer)沉積技術並分別應用於低折射率差(0.30%)之光分歧器(Splitter)及高折射率差(0.75%-1.00%)之陣列波導光柵(Arrayed Waveguide Grating, AWG),並可搭配不需高溫退火製程(Annealing Free)之上覆蓋層沉積專利技術。

Abstract

Planar Lightwave Circuits technology emerges to be the trend for optical communication devices. Although FHD and CVD had been developed more than decade, currently PECVD seems to be the prevailing fabrication technology global wide. Precision controlling the refractive index and dimension of the core channel is crucial in Planar Lightwave Circuits technology. We have developed PECVD thick silica deposition technology including bottom cladding and core layer deposition. An IP owned annealing-free over cladding process is also developed. A power splitter with delta R/I~0.30% has been demonstrated this September. An etching test structure and a top cladding deposition without annealing process are patent filed. And a higher index difference process of delta R/I~0.75% for AWG application will be ready by 2003 Q1.

技術規格

Thickness U% <2% R/I=1.4598, U<+-0.0005 PSG, SiOxNy,GSG R/I =1.4645, U<+-0.0005 BPSG R/I =1.4598, U<+-0.0005 Sidewall Angle 88+-2。

Technical Specification

Thickness U% <2% R/I=1.4598, U<+-0.0005 PSG, SiOxNy,GSG R/I =1.4645, U<+-0.0005 BPSG R/I =1.4598, U<+-0.0005 Sidewall Angle 88+-2。

技術特色

運用半導體製程來大量製作功能複雜的機體光學元件的技術,可符合未來輕薄短小及低成本的趨勢。

應用範圍

光通訊元件:1×N Splitter 及Arrayed Waveguide Grating, AWG

接受技術者具備基礎建議(設備)

PECVD,AOE,爐管,prism coupler。

接受技術者具備基礎建議(專業)

微機電製程能力。

技術分類 製程

聯絡資訊

聯絡人:陳國彰 智慧微系統科技中心

電話:+886-6-3847136 或 Email:kerwin_c@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-6-3847294

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