工業技術研究院

技術簡介

本技術建立一套微機電面型微加工標準製程，提供給微機電元件設計者作為產品原型開發製程平台。此製程可相容於與美國Cronos公司的MUMPs製程，其中包含三層多晶矽與一層金屬層，以及兩層磷矽玻璃（PSG）犧牲層，最後蝕刻釋放後將結構層懸浮出來。適合用來做微致動器、微型開關、微形馬達及光開關等微機電元件。本技術開放給不同的使用者，在單位面積(1cm2)內使用者可依據本技術的結構規範設計元件，然後整合在同一道光罩上一起製作流程，於精密控制的參數下進行製程。

Abstract

This technology offers a set of standardized surface micro machining processes for MEMS designers to realize their prototype devices. The processes are compatible with the so called MUMPs process offered by Cronos in USA. Including three poly-Silicon structure layers, one metal layer and two PSG sacrificial layers it is suitable to fabricate many MEMS devices such as micro-actuator, micro-switch, micro-motor, optical switch and so on. This technology is now opened to the users of all field to design their devices on a unite area (1cm2) and all design will be integrated into a single mask and be processed under precisely controlled parameters.

技術規格

3 poly-silicon 1 Metal

Technical Specification

3 poly-silicon 1 Metal

技術特色

微機電面型微加工標準製程 Layer Thickness Stress(MPa) Sheet ResistanceW/sq Nitride 6000A ± 5% <200 - Poly1 5000A ± 5% < 35 < 25 PSG1 20000A ± 5% - - Poly2 20000A ± 5% < 35 <25 PSG2 7500A ± 5% - - Poly3 15000A ± 5% < 35 <25 Metal (Au) 5000A ± 5% < 20 <0.1

應用範圍

MEMS processes, devices fabrication: actuator, comb driver, switch, micro motor.

接受技術者具備基礎建議（設備）

微機電製程及半導體設備。

接受技術者具備基礎建議（專業）

半導體及微機電製程能力。

聯絡資訊