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工業技術研究院

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技術名稱: 矽晶片濕蝕刻精密對準製程技術

技術簡介

矽的非等向性KOH蝕刻是眾多微機電系統技術的其中一項,其深蝕刻技術更是壓力感測器,加速器等感測器或致動器的關鍵。而為提昇產品的可靠度與穩定性,我們必須能精確的控制蝕刻過程,並預期蝕刻結果。而蝕刻速率的穩定性、蝕刻面的均勻性和側向蝕刻的監控與預測便成為當前商品化與良率提昇結構部分最重要的三大課題。有鑑於此三項議題的關鍵性與重要性,本實驗室同仁通力合作,全力開發,並得到初步的結果。

Abstract

KOH anisotropic wet etching technique is an important part in MEMS application.In order to promote the reliability and stability for high accurate products.Apply precision alignment to control undercut effectively is a key point.

技術規格

KOH蝕刻參數及精密對準的光罩(error<0.2度)。

Technical Specification

Depend on the accurate of precision alignment(<0.2 degree)

技術特色

蝕刻速率的穩定性、蝕刻面的均勻性和側向蝕刻的監控。

應用範圍

壓力感測器,加速器等感測器或致動器。

接受技術者具備基礎建議(設備)

微機電製程及半導體設備。

接受技術者具備基礎建議(專業)

alignment mask design / anisotropic wet etching

技術分類 製程

聯絡資訊

聯絡人:陳國彰 智慧微系統科技中心

電話:+886-6-3847136 或 Email:kerwin_c@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-6-3847294

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