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工業技術研究院

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技術名稱: 利用單晶矽之反應性蝕刻與金屬化等製程製作微機電元件

技術簡介

利用矽單晶片來當作微結構之本體,可以用來製作MEMS元件在已完工之矽積體電路上(Processes compatible with CMOS-technology)。特點為MEMS元件之結構體厚度較不受限制及殘留應力之問題。

Abstract

SCREAM portrays a relatively new micromaching approach and represents an important new technique from several points of view.It is a self-aligned single mask process,run at low-temperatures(<300degree)and completed in less than 8 hours that can be carried out in the presence of integrated circuitry on the same chip.

技術規格

結構高度(max.) : > 10 um、 寬度 : > 2 um、 結構間隙 : > 2 um、 深寬比 > 3

Technical Specification

Vertical depth > 10um Laterial width > 2um Aspectration > 3

技術特色

一道黃光微影 乾式之電漿反應式離子蝕刻、電漿輔助化學氣相沈積 金屬濺鍍 低溫製程與IC CMOS 製程相容

應用範圍

微致動器、微加速度計、微掃瞄器。

接受技術者具備基礎建議(設備)

PVD,CVD,RIE

接受技術者具備基礎建議(專業)

半導體製程背景人才。

技術分類 製程

聯絡資訊

聯絡人:陳國彰 智慧微系統科技中心

電話:+886-6-3847136 或 Email:kerwin_c@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-6-3847294

[{"text":"企業網","weight":13.0},{"text":"材化所","weight":11.5},{"text":"機械所","weight":10.0},{"text":"綠能所","weight":9.4},{"text":"生醫所","weight":8.0},{"text":"半導體","weight":6.2},{"text":"南分院","weight":5.0},{"text":"太陽能","weight":5.0},{"text":"課程","weight":5.0},{"text":"遠紅外線","weight":5.0},{"text":"雷射","weight":4.0},{"text":"LED","weight":4.0},{"text":"LED可見光","weight":3.0},{"text":"5G","weight":3.0},{"text":"工研人","weight":3.0},{"text":"電光所","weight":3.0},{"text":"綠能與環境研究所","weight":3.0},{"text":"機械","weight":3.0},{"text":"資通所","weight":2.0},{"text":"面板","weight":2.0},{"text":"文字轉語音","weight":2.0},{"text":"實習","weight":2.0},{"text":"無人機","weight":2.0},{"text":"生醫","weight":2.0},{"text":"3D","weight":2.0},{"text":"v2x","weight":2.0},{"text":"員工","weight":2.0},{"text":"地圖","weight":2.0},{"text":"太陽光電","weight":2.0},{"text":"材料與化工研究所","weight":1.0}]