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工業技術研究院

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技術名稱: 超臨界點抗黏著乾燥技術

技術簡介

提供二氧化碳超臨界點乾燥釋放技術。

Abstract

It is very important technology in MEMS Drying process.We can dry release 1000um length Max. and applied wafer size 4" up to 6" and 10mm square die.

技術規格

元件尺寸: 1. maximum. Length <= 1000 um   2. Length / Width Ratio:50   結構層:Poly Silicon,厚度範圍:1 ~ 2 um。 犧牲層:Oxide,厚度範圍:2 ~ 4 um。

Technical Specification

1.Structure lager:Poly-Silicon, thickness:1~2um 2.Sacrificial lager:PSG, thickess:2~4um 3.Drying size:Max. length < = 1000um , Length/Width Ratio:50

技術特色

MUMPs (Multi-User MEMS Process)之後製程加工。   自組超零界點乾燥設備。 最長結構可懸浮至1000um。 良率≧85%。

應用範圍

1. 需要利用微加工製程技術中犧牲層濕式去除後抗粘著乾燥技術之相關產品開發。 2. 應用於微型馬達、微致動器、微型開關、微鏡面顯示器等產品之後製程加工。

接受技術者具備基礎建議(設備)

1.犧牲層與濕式結構釋放製程技術 2.面型微加工犧牲層懸浮臂抗黏著釋放及乾燥技術

接受技術者具備基礎建議(專業)

半導體、微機電製程或電機、機械背景人才。

技術分類 製程

聯絡資訊

聯絡人:陳國彰 智慧微系統科技中心

電話:+886-6-3847136 或 Email:kerwin_c@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-6-3847294

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