工業技術研究院

技術簡介

資訊與通訊研究所開發之超低電壓晶片設計技術，涵蓋從次臨界電壓的電路與系統設計，到廣域電壓的動態效能調整架構，全方位地最佳化晶片的功率與能源消耗。本技術已透過使用40奈米製程、65奈米製程、以及0.18微米等多種製程，經過多項晶片驗證與成果發表，證實開發技術之可靠性，提供晶片系統一種前瞻的低耗電解決方案。本技術服務包含提供操作於極低電壓的邏輯電路與電路模組，低電壓低耗電的記憶體，以及可根據製程變異調整的多樣化的省電架構，並且可針對業者需求，分析目標製程於次臨界電壓下之製程變異特性，進行分析、優化和補償容錯設計。其低耗電特性尤其適用於使用電池或是獵能的行動裝置、物聯網裝置，可大幅度提高產品使用時間，提升產品競爭力。

Abstract

Ultra-low voltage (ULV) IC design techniques, developed and featured by Information and Communication Laboratories (ICL), introduce a wide-voltage-range and multiple-supply-voltage solution of optimizing power / energy consumption. Our ULV techniques have extended the supply voltage of ICs from the standard value toward the subthreshold level, which was recognized as the cut-off region. The ultra-low power / energy characteristics of subthreshold IC’s extremely extend life time and show great opportunities to compete battery-powered and energy-harvesting markets, shooting the applications of autonomous, ubiquitous computing, and internet of things. Our subthreshold ICs have been verified using 40nm, 65nm, and 0.18μm technologies. Various subthreshold circuits and systems as well as wide-range and dynamic voltage scaling architectures are ready for migrating to industrial. Available modules include basic ULV logic circuits, power / frequency modules, memories, and adaptive power-saving architectures. In addition to existing modules, we can help analyze the process variations, which are dominant in the yield of ULV ICs, according to the manufacturing technology chose by customers and then suggest proper solutions.

技術規格

(以下技術非限定某製程工藝) 1.次臨界電壓與廣域電壓標準細胞元件庫優化技術 2.次臨界電壓與廣域電壓之間任意電壓位準轉換器(支援0.2V to standard VDD) 3.近臨界電壓SRAM記憶體 4.超低耗電電源管理與頻率產生器 5.廣域電壓動態操作與製程變異控制架構設計

Technical Specification

(No limited to specific manufacturing technology) 1.Subthreshold and wide-voltage-range standard cell library revision service 2.Subthreshold and wide-voltage-range level shifters (0.2V to standard VDD) 3.Near-threshold SRAM IP 4.Ultra-low-power power management units and frequency generators 5.Wide-voltage-range dynamic scaling design / control architectures for process variations

技術特色

1.次臨界電壓與廣域電壓標準細胞元件庫 元件庫新創電路模組與專利 電路設計與篩選分析技術 2.近臨界電壓SRAM記憶體 讀寫穩定性增強架構 高變異度分析技術 3.廣域電壓動態操作與製程變異控制架構設計 搭配元件庫新創電路模組 搭配超低耗電電源管理與頻率產生器 主動式動態電壓頻率管理設計

應用範圍

晶片設計、晶片設計服務、微控制器應用、無線感測網路、物聯網與相關概念應用系統

接受技術者具備基礎建議（設備）

1.晶片設計所需的軟硬體設備 2.晶片量測所需的儀器設備

接受技術者具備基礎建議（專業）

1.晶片開發能力 2.數位與類比電路設計能力 3.晶片系統整合經驗

聯絡資訊