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工業技術研究院

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技術名稱: 寬能隙半導體功率元件(SiC MOSFET)技術

技術簡介

SiC MOSFET之元件設計、製程整合及驗證技術,包含: 1. 1200V/20A SiC 溝槽型 MOSFET元件設計與製程整合技術 2. 1200V20A SiC 溝槽型MOSFET元件測試驗證

Abstract

Device design, process integration and verification of SiC MOSFET, including: 1. Device design and process integration technology of 1200V/20A SiC Trench MOSFET 2. Device verification technology of 1200V/20A SiC Trench MOSFET

技術規格

ton < 200ns, toff < 200ns, tRR<200 ns

Technical Specification

ton < 200ns, toff < 200ns, tRR<200 ns

技術特色

本技術預計在2016完成研發,可提供授權廠商技術報告、諮詢及部分製程服務。

應用範圍

變壓器、電動汽車、馬達驅動器...等

接受技術者具備基礎建議(設備)

半導體元件之設計或製造相關設備

接受技術者具備基礎建議(專業)

半導體元件之設計或製造相關技術能力

技術分類 0M

聯絡資訊

聯絡人:張順賢(830122) 企畫與推廣組

電話:+886-3-5913917 或 Email:shchang@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5917690

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