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工業技術研究院

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技術名稱: 奈米金屬輔助酸蝕刻技術

技術簡介

經由奈米金屬觸媒進行催化反應,將矽基板表面氧化,再使用氫氟酸與雙氧水作為蝕刻液,對矽基板表面進行織構化

Abstract

MACE is based on the reaction between nano-sized metal particles and a Si substrate. After an oxidation of a Si substrate, a mixture of H2O2 and HF play as an etchant to remove SiOx. It is therefore that the texturization of the DW multi-Si can be achieved by MACE process.

技術規格

根據後續氫氧化鉀處理時間的不同,可使矽基板於300~1100nm波段反射率最低可達到15%以下。

Technical Specification

Reflectance of processed Si substrates are determined by UV-Vis meter, which can be as low as 15% depending on the treatment time of alkaline etching process.

技術特色

奈米金屬輔助酸蝕刻技術可於任何種類的矽基板表面進行織構化處理,包含單/多晶以及線切割與鑽石線切割等手法,且由於表面微結構的特性,可以將300~1100nm波段反射率降低至15%以下,進而提升太陽電池元件效率。

應用範圍

矽基板前處理、太陽電池元件

接受技術者具備基礎建議(設備)

傳統酸蝕刻設備

接受技術者具備基礎建議(專業)

化學/化工

技術分類 02 R太陽光電技術

聯絡資訊

聯絡人:呂信緯 太陽光電技術組

電話:02-25432268#24 或 Email:HWLu@itri.org.tw

客服專線:+886-800-45-8899

傳真:03-5822157

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