工業技術研究院

技術簡介

相較於傳統矽晶太陽能電池，具有本質非晶矽之異質接面矽太陽能電池有幾項優勢：(1) 低溫低耗能製程、 (2)高開路電壓(Voc) (3)低溫度係數(4)高效率(5)無光劣化(LID)及無電位誘發衰減(PID)(6)高PTC/STC rating。工業技術研究院綠能與環境研究所近年來致力發展此低耗能高效率之太陽電池技術，希望能在不久將來將其推廣量產。為了達到這個目標，我們從晶片的選擇、清洗與織構化處理、非晶本質層與摻雜層、透明導電膜、甚至元件完成時之熱處理等，都需要相互的配合與最佳化才能達成。目前我們已可以製作出效率23.28％的異質接面太陽電池。

Abstract

The heterojunction silicon-based (HJT) solar cell has recently attracted more attention because of its very high efficiency and simple structure which is composed of hydrogenated amorphous silicon (a-Si:H) layers and a crystalline silicon (c-Si) substrate. There are many advantages such as low temperature processing, high open circuit voltage, low efficiency-temperature coefficient, high efficiency, no LID ＆ PID and high PTC/STC rating. Recently, the technologies of the HJT solar cell have been developed in Green Energy Laboratories, Industrial Technology Research Institute. It needs to optimize each step to fulfill the requirements to obtain the high efficiency HJT solar cell, including the wafer cleaning and texturization, the deposition of the intrinsic amorphous layer and doping layers, the transparent conducting oxide layer and the post treatment of the devices. The highest efficiency of the HJT solar cell was 23.28％.

技術規格

利用非晶矽進行表面鈍化，開發多階段式鍍膜處理增加表面鈍化能力，降低表面載子複合，低溫度效應0.27 ％/°C，太陽電池效率23.28 ％。

Technical Specification

Amorphous silicon was used to improve the surface passivation and reduced surface carrier recombination. We can get the low temperature effect was 0.27％ / ° C and the solar cell efficiency was 23.28％.

技術特色

1.低製程溫度 2.低成本 3.低溫度係數 4.高開路電壓 5.高效率 6.High PTC/STC rating 7.無光劣化效應 8.無電位誘發衰減

應用範圍

太陽能產業

接受技術者具備基礎建議（設備）

具有太陽能設備之業者

接受技術者具備基礎建議（專業）

半導體相關基礎

聯絡資訊