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工業技術研究院

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技術名稱: 太陽能電池結構與其形成方法

技術簡介

本發明提供之太陽能電池結構的形成方法,包括:形成金屬電極於基板上;形成吸收層於金屬電極上;形成緩衝層於吸收層上;形成氧化鈦層於緩衝層上,且氧化鈦層之厚度大於0且小於10nm;以及形成透明導電氧化物層於氧化鈦層上,其中形成氧化鈦層於緩衝層上之步驟為原子層沉積,該原子層沉積之溫度介於100℃至180℃之間,且原子層沉積之前驅物為四異丙氧基鈦。

Abstract

A method of forming a solar cell structure is provided, which includes forming a metal electrode on a substrate, forming an absorber layer on the metal electrode, and forming a buffer layer on the absorber layer. The method also forms a titanium oxide layer on the buffer layer, wherein a thickness of the titanium oxide layer is greater than 0 and less than 10nm. The method further forms a transparent conductive oxide layer on the titanium oxide layer. The step of forming the titanium oxide layer is atomic layer deposition (ALD) performed at a temperature of 100℃ to 180℃ with a precursor of titanium tetraisopropoxide.

技術規格

電池元件短電流(Jsc)提升3%

Technical Specification

Enhance Jsc 3%

技術特色

採用ALD鍍膜之高覆蓋率以及TiO2高能隙之特色,增加元件之光利用率。

應用範圍

CIGS太陽電池

接受技術者具備基礎建議(設備)

化學水浴槽以及ALD設備

接受技術者具備基礎建議(專業)

太陽能電池相關製程

技術分類 02 R太陽光電技術

聯絡資訊

聯絡人:徐為哲 太陽光電技術組

電話:06-3636857 或 Email:hsuweitse@itri.org.tw

客服專線:+886-800-45-8899

傳真:

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