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工業技術研究院

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技術名稱: 大面積高均勻鍍銅技術

技術簡介

以濺鍍之金屬膜層作為後續電鍍製程之Seed Layer,並輔以半加成法(Semi-additive Method)技術搭配面板級大面積電鍍設備進行厚膜銅電鍍製程,以達到大面積且均勻性高之銅導線需求。

Abstract

The sputtered metal film is used as a seed layer for the plating process. The semi-additive method and the panel-scale large-area plating equipment are used for the thick copper electroplating process to achieve large area and high uniformity.

技術規格

1. 高解析導線線寬/線距:2 μm/2 μm@ 370 mm × 470 mm Glass Size。 2. 銅導線厚度均勻性≧90 % ,電鍍可填孔孔徑 2 μm@ 370 mm × 470 mm Glass Size。 3. 可通過 85℃/85% R.H., 500小時後,無Open/Short,導線外觀無損傷,且導線與介電層介面附著力5B之導線結構可靠度驗證。 4. 可通過55℃/125℃循環 1,000次後,無Open/Short,導線外觀無損傷,且導線與介電層介面附著力5B之導線結構高低溫冷熱衝擊驗證。

Technical Specification

none

技術特色

以濺鍍之金屬膜層作為後續電鍍製程之Seed Layer,並輔以半加成法(Semi-additive Method)技術搭配面板級大面積電鍍設備進行厚膜銅電鍍製程,以達到大面積且均勻性高之銅導線需求。

應用範圍

高階晶片(高I/O數)

接受技術者具備基礎建議(設備)

大面積高均勻鍍銅設備

接受技術者具備基礎建議(專業)

顯示器電子產品相關背景人才

技術分類 0M

聯絡資訊

聯絡人:李裕正 面板級製程應用技術組

電話:+886-3-5918395 或 Email:YZLee@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5820046

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