工業技術研究院

技術簡介

這份技術報告描述了工研院穿隧氧化鈍化異質接面太陽能電池的研究，並藉由相關文獻與專利的回顧建立了技術魚骨圖與專利地圖。藉由模擬顯示此太陽能電池具有高效率的潛力，我們也計算了氧化層厚度對接觸電阻的影響。實驗中發現，多晶矽與穿隧氧化層鈍化結構在退火後會產生嚴重的多孔現象，我們設計了一個專利結構並改善製程解決了這個問題。接著我們藉由關鍵製程的調控提升了鈍化的品質，我們同時針對多晶矽與穿隧氧化層的鈍化特性設計了一個新的太陽能電池結構，這個結構讓我們製作了低成本且高效率的太陽能電池。

Abstract

This technique report describes the research of tunnel oxide passivated heterojunction silicon solar cell (HJT) in ITRI. The technology of fishbone and patent map are established as the research plan after review of related papers and patents. Simulation is employed to evaluation of potential efficiency of tunnel oxide passivated HJT. Tunnel effect of ultrathin oxide on contact resistance is investigated. Blister phenomenon of poly-Si/tunnel oxide was found after annealing. A patent structure and process was designed to solve the issue of the blister. Passivation quality was improvement through key process adjustment. An appropriate cell structure was design to fit the property of poly-Si/tunnel oxide passivation. High efficiency and low cost tunnel oxide passivated HJT was fabricated.

技術規格

少數載子生命週期:＆gt; 1 ms； 隱開路電壓:＆gt;700mV

Technical Specification

Minority carrier life time:＆gt; 1 ms； iVoc:＆gt;700mV

技術特色

1.利用多晶矽與穿隧氧化層做表面鈍化,少數載子生命週期可大於1 ms 2.減少因為高溫造成的氣泡現象

應用範圍

太陽能產業

接受技術者具備基礎建議（設備）

具有太陽能電池相關之生產、製造、檢測與維修設備

接受技術者具備基礎建議（專業）

具備太陽能領域研發工程人員與銷售業務

聯絡資訊