工業技術研究院

技術簡介

由於異質接面太陽電池的生產設備的成本造價昂貴，與製程每一步都要求非常嚴格，因而侷限大規模量產發展。本計畫目的即是提出一新的技術構想，開發穿隧型異質接面電池，取代一般異質接面的非晶矽結構，利用超薄穿隧氧化層結構，有效降低晶片表面缺陷。在穿隧層與n型多晶矽結構鈍化結構的開發過程發現，孔洞去除、退火溫度、以及與摻雜濃度對載子生命週期(life time)有很大的影響。在p型多晶矽鈍化結構上，調變摻雜濃度，使得life time能夠達到4.3 msec，顯示p型多晶矽也具有良好的鈍化能力。利用熱氧化能夠成長超薄的氧化層，獲得良好的氧化層厚度控制。透明導電膜(TCO)除了作為載子傳輸層外，也作為抗反射層之用，必須利用其折射率與厚度的匹配來達到反射光最低，也就是大部分的光都進入至元件當中，同時要利用退火手段來修復TCO濺鍍過程中對表面所造成的損傷後。P型多晶矽與n型多晶矽相比之下，其片電阻高了許多，因此降p型多晶矽電阻是能夠降低整體元件串聯電阻與提高填充因子(FF)的辦法之一。 後續將朝向提高表面鈍化效果以及元件的金屬化技術進行，以因應未來導入試量產線之準備。

Abstract

Due to the high cost of production equipment and the strict requirements of the process, the heterojunction solar cells development of large-scale mass production is limited. This project is to propose a new technical idea to develop a tunneling oxide heterojunction cell that replaces the amorphous silicon heterojunction. We use an ultra-thin tunnel oxide to effectively reduce surface defects on the wafer. In the development of tunneling oxide and n-type polysilicon passivation structures, it was found that hole removal, annealing temperature, and doping concentration have a significant impact on the carrier life time. In the p-type polysilicon passivation structure, the modulation doping concentration, making life time can reach 4.3 msec, shows p-type polysilicon also has good passivation ability. The use of thermal oxidation can grow very thin oxide layer and good oxide layer thickness control. In addition to being a carrier transport layer, the TCO also serves as an anti-reflection layer. The TCO must have the lowest reflectance with its refractive index and thickness that means most of the light enters the device. Meanwhile, Annealing should be used to repair the surface damage caused by TCO sputtering. Compared to n-type polysilicon, P-type polysilicon has much higher sheet resistance, so lowering the p-type polysilicon resistance is one way to reduce the series resistance of the entire device and to increase the fill factor (FF). Subsequent efforts will be made to improve surface passivation and the metallization technology in preparation for future introduction into the pilot line.

技術規格

穿隧層與n型多晶矽結構鈍化少數載子生命週期:＆gt; 2 ms； 穿隧層與p型多晶矽結構鈍化少數載子生命週期:＆gt; 2 ms

Technical Specification

Tunneling layer and n-type polysilicon structure passivation minority carrier life time:＆gt; 2 ms； Tunneling layer and p-type polysilicon structure passivation minority carrier life time:＆gt; 2 ms

技術特色

1.高開路電壓 2.高少數載子生命週期

應用範圍

太陽能產業

接受技術者具備基礎建議（設備）

具有太陽能電池相關之生產、製造、檢測、量測與維修…等設備

接受技術者具備基礎建議（專業）

具備太陽能領域研發工程人員與銷售業務

聯絡資訊