工業技術研究院

技術簡介

本研究穿隧型異質接面太陽電池中的穿隧異質接面(N-poly Si/SiO2/Si)的物性探討，藉由田口實驗法，來降低其複合電流密度達2.8 fA/cm2，使具有優異的表面鈍化效果。在正面金屬化製程是使用雷射開孔加上銅電鍍來製作電極。利用電鍍時的電流與時間可以控制銅的厚度與線寬，在45μm的線寬下，電池的短路電流密度已經可以達到40.68 mA/cm2。背面則使用ITO加上Ag來當作電極。利用背面N-poly與ITO製程開發及正面Emitter/Al2O3製程開發提升鈍化效果，太陽電池元件最高效率達成23.53％。 本研究也藉由磁控濺鍍方法開發高載子遷移率製程，在室溫下於N-Poly上製作ITO薄膜，發現LPCVD所鍍製的N-poly層在高磁場沉積下可以維持較低的J0以及較高的implied Voc。在ITO載子遷移率研究方面，實驗發現隨著沉積溫度越高，載子遷移率從41提升至56.8 cm2/V sec，此外也透過250℃後退火的方式要再將晶界上的缺陷進行修補，在尺寸6 mm × 6 mm的樣品上遷移率達成61.1 cm2/V sec。

Abstract

In this study, the physical properties of the tunneling heterojunction (N-poly Si/SiO2/Si) were investigated. The Taguchi experimental method was used to reduce the recombination current density to 2.8 fA/cm2 showing excellent surface passivation effect. In the metallization process, front electrodes were fabricated using laser opening and copper plating. The thickness and line width of copper were controlled by the current and time. By the line width of 45 μm, the short-circuit current density of the solar cell could reach 40.68 mA/cm2. ITO and Ag was used as the back side electrode. The passivation effect was improved by the development of the back side N-poly/ITO process and the front side emitter/Al2O3 process. The solar cell efficiency reached 23.53％. Additionally, high mobility TCO film was also developed by magnetron sputtering process. The ITO film was fabricated on N-Poly at room temperature. This study found that the N-poly layer coated by LPCVD has low J0 under high magnetic field condition. It was also found that the carrier mobility increased from 41 to 56.8 cm2/V sec by increasing deposition temperature and defects on the grain boundary were repaired by post-annealing at 250 °C. Finally, the TCO carrier mobility reached 61.1 cm2/V sec was obtained by 6mm x 6mm sample. In this study, the high-carrier mobility process was also developed by magnetron sputtering. The ITO film was fabricated on N-Poly at room temperature. This study found that the N-poly layer coated by LPCVD has low J0 under high magnetic field. In the study of ITO carrier mobility, it was found that the carrier mobility increased from 41 to 56.8 cm2/V sec at high deposition temperature. The defects on the grain boundary were repaired by post-annealing at 250 °C. The 6 mm × 6 mm mobility reached 61.1 cm2/V sec

技術規格

穿隧層與n型多晶矽結構複合電流密度＜4 fA/cm2 ；ITO載子遷移率＞40 cm2/V sec

Technical Specification

Tunneling layer and n-type polysilicon structure passivation recombination current density:＜ 4 fA/cm2； ITO carrier mobility e:＞ 40 cm2/V sec

技術特色

1.表面鈍化優良,低複合電流密度 2.ITO高載子遷移率

應用範圍

太陽能產業

接受技術者具備基礎建議（設備）

具有太陽能電池相關之生產、製造、檢測、量測與維修…等設備

接受技術者具備基礎建議（專業）

具備太陽能領域研發工程人員與銷售業務

聯絡資訊