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工業技術研究院

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技術名稱: 電漿蝕刻技術

技術簡介

本技術可提供半導體晶圓高速蝕刻製程,Si蝕刻速率>10µm/min。

Abstract

This technology provide high etching rate for semiconductor etch process, the etch rateof Si wafer is higher than 10 µm/min.

技術規格

晶圓尺寸: 12吋晶圓、Si蝕刻率>10 µm/min

Technical Specification

-

技術特色

本技術可提供半導體晶圓高速蝕刻製程,Si蝕刻速率>10µm/min。

應用範圍

半導體封裝、平面顯示器、光電及微機電產業

接受技術者具備基礎建議(設備)

微機電/半導體相關設備

接受技術者具備基礎建議(專業)

電漿、半導體製程、材料、化學

技術分類 精密機械

聯絡資訊

聯絡人:劉志宏 先進製造技術組

電話:+886-3-5917796 或 Email:stanliu@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5820043

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