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工業技術研究院

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技術名稱: 鋁正面電極及鋁選擇性摻雜多晶矽鈍化太陽能電池

技術簡介

一種n型矽晶太陽能電池包含p型摻雜區、抗反射層、n +型背電場、鋁電極、鋁摻雜區以及背電極。電池正面抗反射層以雷射畫線,再以網印技術填覆鋁金屬於電池正面p型擴散摻雜區上形成導電鋁電極,而局部鋁摻雜區以鋁金屬燒結形成矽鋁合金於正面鋁電極下的p型摻雜區內,其中鋁摻雜區與鋁電極直接接觸。n +型背電場形成於n型矽基板的背面,背電極製作於n +型背電場上。

Abstract

A solar cell includes an N-type silicon substrate, a P-type doping region, an anti-reflective layer, an n+ back surface field, a plurality of aluminum electrodes, a plurality of aluminum doped regions, and a backside electrode. The anti-reflective layer on the front of the solar cell is opened with laser, and then aluminum is filled with screen printing technology to form conductive aluminum electrodes on the p-type doped area on the front of the solar cell, and the aluminum doped area is sintered with aluminum to form a silicon-aluminum alloy. In the p-type doped area under the front aluminum electrodes, the aluminum doped area is in direct contact with the aluminum electrodes. The n + type back surface field is formed on the back of the n-type silicon substrate, and the back electrode is made on the n + type back surface field.

技術規格

一種太陽能電池,包括:n型矽基板,具有第一表面與相對於所述第一表面的第二表面;p型摻雜區,形成於所述n型矽基板的所述第一表面;多晶矽層,形成於所述p型摻雜區上,其中所述多晶矽層的材料包括多晶氧化矽或多晶碳化矽;抗反射層,形成於所述多矽晶層上;多數個鋁電極,形成於所述多晶矽層上;多數個鋁摻雜區,形成於所述多數個鋁電極下的所述多晶矽層內,且所述多數個鋁摻雜區與所述多數個鋁電極直接接觸;n +型背電場,形成於所述n型矽基板的所述第二表面;以及背電極,形成於所述n型矽基板的所述第二表面上。

Technical Specification

A solar cell, comprising: an n-type silicon substrate having a first surface and a second surface opposite to the first surface; and a p-type doped region formed on the first surface of the n-type silicon substrate. A polysilicon layer is formed on the p-type doped region, wherein the material of the polysilicon layer includes polysilicon oxide or polysilicon carbide; an anti-reflection layer is formed on the polysilicon layer; a plurality of aluminum electrodes are formed on the polysilicon layer; a plurality of aluminum doped regions are formed in the polysilicon layer under the plurality of aluminum electrodes, and the plurality of aluminum doped regions are directly contacted to the aluminum electrodes; an n + type back electric field formed on the second surface of the n-type silicon substrate; and a back electrode formed on the second surface of the n-type silicon substrate.

技術特色

本專利提供一種太陽能電池技術,以鋁金屬同時作為正面電極及選擇性摻雜源,因取代傳統銀可降低製作成本。此外,結構上以多晶矽層隔開矽基板及鋁金屬,多晶矽層提供矽基板表面鈍化效果,又可避免雷射開線之處矽基板損傷,進而降低少數載子複合的機率,以提升元件性能。

應用範圍

矽基太陽電池

接受技術者具備基礎建議(設備)

矽基太陽電池製造廠或製程設備商

接受技術者具備基礎建議(專業)

矽基太陽電池製程及設備知識

技術分類 02 R太陽光電技術

聯絡資訊

聯絡人:郭明村 太陽光電技術組

電話:+886-6-3636818 或 Email:KnK.Kuo@itri.org.tw

客服專線:+886-800-45-8899

傳真:none

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