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工業技術研究院

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技術名稱: 新型IBPC太陽電池

技術簡介

一種交指背面接觸(IBC)型太陽電池結合異質接面穿隧層,其使用穿隧氧化膜與多晶矽膜。為降低成本,本技術捨棄傳統曝光顯影技術,改採精密網印及雷射技術。針對元件設計以模擬技術評估最佳元件轉換效率達24%,之後也依元件設計製作成元件。

Abstract

An interdigitated back contact (IBC) solar cell combined with a heterojunction tunneling layer uses films of tunneling oxide and polysilicon. In order to reduce costs, this technology abandons the traditional lithographic technology and uses precise screen printing and laser technology instead. For the device design, the conversion efficiency of the best device was simulated to reach 24%, and then the real device was prepared.

技術規格

一種具備異質接面穿隧層的交指背面鈍化接觸式電池,其開發技術重點包括: (1)背電極圖形最佳化設計:降低電極厚度,縮短製程時間,增加良率。 (2)鈍化接觸技術開發:採用多晶矽摻雜鍍膜取代擴散或離子植入製程,改善均勻性並降低成本。 (3)對位精準度技術開發:射極與金屬電極接觸面積增加使串聯電阻下降、填充因子上升。

Technical Specification

An interdigitated back passivation contact (IBPC) solar cell with a heterojunction tunneling layer. The key development technologies include: (1) Optimized design of back electrode pattern: reduce electrode thickness, shorten process time, and increase yield. (2) Development of passivation contact technology: use polycrystalline silicon doping deposition to replace the diffusion process, and thus improve uniformities and reduce costs. (3) Development of alignment accuracy technology: increase the contact area between the emitter and the metal electrode, and thus reduce series resistance and increase fill factor.

技術特色

本技術提供一種高效率太陽電池結構及製造技術,使其有低成本製作可能。

應用範圍

太陽能電池

接受技術者具備基礎建議(設備)

太陽能電池製造廠及相關製程設備廠

接受技術者具備基礎建議(專業)

太陽光電電池原理及製程知識

技術分類 02 R太陽光電技術

聯絡資訊

聯絡人:張瀚丞 太陽光電技術組

電話:+886-6-3636831 或 Email:YESSEY@itri.org.tw

客服專線:+886-800-45-8899

傳真:none

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