工業技術研究院

技術簡介

矽基太陽能電池及其製造方法。所述矽基太陽能電池包括矽基板、摻雜區、摻雜介電層、摻雜含矽多晶層、第一電極與第二電極。矽基板具有相對的第一表面與第二表面，摻雜區形成於所述第一表面內，摻雜介電層則設置於所述摻雜區上。摻雜含矽多晶層設置於所述摻雜介電層上，其中摻雜含矽多晶層的厚度為5nm至35nm。所述摻雜區、所述摻雜介電層以及所述摻雜含矽多晶層具有相同的摻質，且所述摻質的摻雜濃度從摻雜含矽多晶層往矽基板的方向逐漸遞減。第一電極與第二電極則分別設置於摻雜含矽多晶層上與第二表面上。

Abstract

A silicon-based solar cell and a method of manufacturing the same are provided. The Si-based solar cell includes a silicon substrate, a doped region, a doped dielectric layer, a doped Si-containing polycrystalline layer, a first electrode, and a second electrode. The silicon substrate has opposite first and second surfaces, the doped region is formed in the first surface, and the doped dielectric layer is disposed on the doped region. The doped Si-containing polycrystalline layer is disposed on the doped dielectric layer, wherein the thickness of the doped Si-containing polycrystalline layer is 5nm to 35nm. The doped region, the doped dielectric layer, and the doped Si-containing polycrystalline layer have the same dopant, and the doping concentration of the dopant gradually decreases towards a direction from the doped Si-containing polycrystalline layer to the silicon substrate. The first and second electrodes are respectively disposed on the doped Si-containing polycrystalline layer and on the second surface.

技術規格

1.摻雜含矽多晶層的厚度為5nm至35nm。2. 摻雜含矽多晶層的摻雜濃度為10 20至10 22原子/cm3。

Technical Specification

1.The thickness of doped polysilicon layer is 5nm~35nm. 2.The doping concentration of doped polysilicon layer is 1020~1022atom/cm3.

技術特色

1.內容包含製作穿隧氧化層及多晶矽層的製作。 2.技術可應用於TOPCon等鈍化改良太陽能電池。 3.與傳統高溫擴散製作的射極電池比較，可提升0.4％的轉換效率。

應用範圍

光電、半導體，能源等相關產業

接受技術者具備基礎建議（設備）

化學蝕刻槽、擴散設備、化學氣相沉積或相關薄膜機台等光電製造相關設備。

接受技術者具備基礎建議（專業）

具備半導體、光電、能源及材料等相關經驗的研發人員與銷售業務。

聯絡資訊