工業技術研究院

技術簡介

本計畫之技術開發包括低損傷雷射製程、無繞鍍鈍化接觸技術及寬能隙材料。在低損傷雷射製程部分，利用不傷及表面雷射離焦製程可以大幅降低硼擴散晶片之片電阻。無繞鍍鈍化接觸技術採用PVD鍍製多晶矽薄膜，利用遮罩方式解決繞鍍問題。將無繞鍍鈍化接觸技術應用於TOPCon太陽電池，最高效率達22.64％。寬能隙鈍化接觸材料採用PECVD鍍製SiCx薄膜。藉由調整SiH4:CH4流量比例及退火條件的製程優化，最佳表面鈍化效果iVoc達711 mV，J0為7.7 fA/cm2。SiCx能隙達1.52 eV，符合太陽電池元件應用之需求。

Abstract

The technical development content of this project includes low-damage laser doping, non-wraparound passivated contact film and wide energy gap materials. The sheet resistance of boron emitter can be greatly reduced by using laser defocus doping that does not damage the surface of silicon wafer. The non-wraparound polysilicon passivation contact layer is deposited by magnetron sputtering, which avoids the wraparound problem by edge shielding. TOPCon solar cells with non-wraparound passivated contact technology have the results of best efficiency reaches 22.64％. The wide energy gap passivation contact material is SiCx thin film, which is deposited by PECVD. According to adjusting the flow ratio of SiH4:CH4 and optimizing annealing conditions, the result shows the iVoc 711 mV and J0 7.7 fA/cm2. SiCx has an energy gap of 1.52 eV, which meets the requirement for high-efficiency solar cell manufacturing.

技術規格

1.低損傷雷射製程，利用雷射離焦製程降低硼擴散晶片之片電阻，降幅≧30％。2.無繞鍍鈍化接觸技術採用PVD鍍製多晶矽薄膜，利用遮罩方式解決繞鍍問題，多晶矽鈍化效果iVoc≧740 mV。整合TOPCon太陽電池效率≧22.60％。3.寬能隙鈍化接觸材料採用PECVD鍍製碳化矽薄膜，鈍化效果iVoc≧710 mV，J0≦10 fA/cm2、能隙≧1.50 eV。

Technical Specification

1. The sheet resistance of boron emitter can be greatly reduced by using laser defocus doping, reducing≧30％. 2. The non-wraparound polysilicon passivation contact layer is deposited by magnetron sputtering, which avoids the wraparound problem by edge shielding. The polysilicon iVoc ≧740 mV and integrated TOPCon solar cell efficiency ≧ 22.60％. 3. The wide energy gap passivation contact material is SiCx thin film, which is deposited by PECVD. The passivation result shows the iVoc≧710 mV and J0≦10 fA/cm2. SiCx has an energy gap of 1.52 eV.

技術特色

1.低損傷雷射製程技術可應用於TOPCon正面選擇性硼摻雜射極。 2.無繞鍍鍍膜技術應用於TOPCon背面多晶矽鈍化接觸層生長，無繞鍍問題產生，並可減少TOPCon太陽電池4道製程程序。 3.碳化矽正面寬能隙鈍化接觸層採用PECVD製作，國內尚無此技術，為新技術及新材料開發。 4.內容包含太陽電池製作流程與步驟，而非只有部分步驟。

應用範圍

光電、半導體、能源、真空設備、材料等相關產業

接受技術者具備基礎建議（設備）

雷射機台、物理氣相沉積、電漿輔助化學氣相沉積等光電製造相關設備。

接受技術者具備基礎建議（專業）

具備半導體、光電、能源及材料等相關經驗的研發人員與銷售業務。

聯絡資訊