工業技術研究院

技術簡介

完成非破壞性碳化矽晶錠檢測技術評估，完成X-ray掃描初步檢測系統建構規劃及驗證，並獲得探測源及平板偵測器的規格需求。X光管電壓和功率需分別高於130kV及25W；平板偵測器優選TFT偵測器，其有效面積須達43 cm×43 cm。檢測晶錠小切塊，可觀察到樣品內部約250 µm缺陷微管。利用演算法進行微管缺陷影像辨識，完成初步辨識流程，累積具有6048筆缺陷特徵樣本之資料庫，並成功辨識出微管缺陷。

Abstract

We completed the evaluation of silicon carbide ingot non-destructive inspection techniques. The preliminary construction and verification of X-ray inspection system were finished, and put forward the specification requirements for detection source and flat-panel detector. The voltage and power of X-ray tube must be higher than 130kV and 25W, respectively. The flat-panel detector is preferably a TFT detector with an effective area of 43 cm×43 cm. A piece of cut ingot inspected by the X-ray system, the micropipes with a diameter of about 250 µm can be observed. Using algorithm for image recognition, the preliminary identification process was completed, a defect database containing 6048 defect feature samples was established, and micropipes were successfully identified.

技術規格

1.X光管電壓和功率須分別高於130kV及25W。2.優選TFT偵測器，有效面積須達43cm × 43cm。3.可檢出微管缺陷直徑250 µm。

Technical Specification

1.The voltage and power of X-ray tube must be higher than 130kV and 25W, respectively. 2.The TFT detector with an effective area of 43cm × 43cm. 3.The micropipes with a diameter of 250 µm can be observed.

技術特色

1. 包含不同檢測光源及偵測器樣式評估，優選最佳組合。 2. 使用X-ray CT方式，拍攝SiC晶錠進行層像分析觀測缺陷。 3. 運用演算法進行微管缺陷影像辨識，累積微管特徵樣本資料庫。

應用範圍

半導體材料，功率轉換器等產業。

接受技術者具備基礎建議（設備）

符合政府關於游離輻射使用的規定，如鉛室或X-ray使用執照。

接受技術者具備基礎建議（專業）

對於SiC材料和X-ray間的交互作用，及SiC晶錠內部具有的缺陷型態需有基礎知識理解。

聯絡資訊