工業技術研究院

技術簡介

本揭露提供一種製造晶錠的裝置，包含一堝體與一蓋體；堝體具有一堝身，堝身底部設有一堝底，堝身與堝底形成一內部空間供置放長晶原料，堝身頂部具有一環狀之堝身外側壁與堝身內側壁，於堝身外側壁與堝身內側壁間具有一環狀頂緣，堝身內側壁與頂緣之相連接處形成一環狀且非直角之第一導準部；蓋體之底面供設置晶種，底面設有一突出部，其外周緣對應於第一導準部具有一環狀且非直角之第二導準部，蓋體可分離地覆蓋於堝體頂部，突出部嵌於堝身內側壁內，第一導準部與第二導準部相接觸，且突出部外圍之蓋體之底面與堝體之頂緣接觸。

Abstract

An apparatus for producing ingot is provided, which includes a crucible and a lid. The crucible has a body and a bottom forming a space for accommodating materials. An annular body outer wall and body inner wall are disposed on top of the body with atop edge in between. An annular and non-right angle first guiding part is formed on the position that the body inner wall and the top edge are connected. The bottom of the lid is for disposing seed, and an annular and non-right angle second guiding part is formed on the outer wall of a protrusion on the bottom of the lid. The lid is detachably mounted on top of the crucible, the first guiding part contacting with the second guiding part, and the bottom of the lid which is surrounding the protrusion contacting with the top edge of the crucible.

技術規格

製造晶錠的裝置，其中該頂緣之寬度為A，該堝身外側壁與該堝身內側壁的距離為B，該頂緣與該第一導準部之底緣之垂直距離為C，該A、該B、該C的關係為： A＜B； 0.5 ≦ A＜100毫米(mm)； 3 ≦ B ≦100毫米(mm)； 1 ≦ C ≦ 600毫米(mm)。

Technical Specification

The apparatus for producing an ingot. A: width of top edge. B: distance between the annular main outer wall and the annular main inner wall. C: vertical distance between the annular top edge and a lower edge of the annular first guiding part. relationship of the A, the B and the C is: A＜B, 0.5≦A＜100mm, 3≦B≦100mm, and 1≦C≦600mm.

技術特色

蓋體與堝體相對應之第一導準部與第二導準部為非直角，藉由第一導準部與第二導準部具有之自導準功能，蓋體可確實與堝體密合，因此能確保提升長晶之品質，提升晶錠之良率與品質。

應用範圍

應用於晶錠生長製程，如SiC…等。

接受技術者具備基礎建議（設備）

物理氣相傳輸法(PVT)之長晶設備。

接受技術者具備基礎建議（專業）

具備化合物半導體相關知識與SiC長晶經驗。

聯絡資訊