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工業技術研究院

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磁性記憶體MRAM

技術簡介

 磁性記憶體MRAM。
磁性記憶體MRAM。

工研院pSTT隨機存取非揮發性磁性記憶體,讀寫次數接近無窮大、讀寫速度快、與CMOS相容度高。結合etching stop on MgO製程技術以及合成式反鐵磁(Synthetic AntiFerromagnetic, SAF)參考層設計,成功解決外漏磁場增大,導致元件失效之技術瓶頸,使得垂直磁化元件得以應用於先進製程之崁入式記憶體,甚至有機會取代DRAM之高密度非揮發性記憶體,為磁性記憶體重大的突破。此外藉由製程與讀寫電路之優化,以pSTT MRAM實現高物理不可複製晶片(Physically Unclonable Function, PUF)技術,作為高高安全度金鑰之核心。在下一世代MRAM技術上,工研院針對自旋軌道轉矩式(spin-orbit torque, SOT) MRAM進行先期研究,開發出具有高量產性之新式元件結構,並針對元件操作特性作深入分析。上述各項研究成果已獲國際肯定,發表於2012 IEDM、2013 IEEE Electron Device Letters、2016 IEDM、2018 IEEE Electron Device Letters。



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