Technology Overview
SiC Power Module for EV Charging Solution.
ITRI’s 1700V SiC MOSFET power module with excellence packaging technology and performance includes low thermal resistance and parasitic inductance, low conduction and switching loss. The optimal power module design with the integration of the SiC MOSFET devices generating a compact packaging as well as the compliance of reliability requirement following AQG-324 international standard for vehicle regulations. EV system of 800V+ defined by international car manufacturers, of which the power density of the charging system should be 4.6 kW requirement. Applying the 1700V high breakdown voltage SiC modules can reduce the current and achieve better system performance.
Technology Features
SiC MOSFET: 1700V/100A
SiC Power Module:
- Stray inductance ≤ 25nH
- Thermal resistance ≤ 0.4 K/W
- Insulation voltage through 5kV/AC-1mins