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Industrial Technology Research Institute


MRAM (Magnetoresistive Random Access Memory)

Technology Overview

MRAM (Magnetoresistive Random Access Memory).
MRAM (Magnetoresistive Random Access Memory).

SOT MRAM with the features of unlimited endurance and fast operation speed, is viewed as an alternative solution of conventional SRAM, nonvolatile cache memory applications. By using ITRI’s 8-inch BEOL process line and chip design team, ITRI develop the key processes for advanced MRAM and realize the Kbits to Mbits MRAM chips. Our foundry line can provide SOT MRAM technology service for the industry, academia and research community for the technology development, prototyping, preliminary trial production of new magnetic devices.

Applications & Benefits

  • Embedded Non-Volatile Memory
  • IOT/AIOT system
  • AI Computing Engine
  • Computing in memory (CIM)
  • Writing time: ns-level
  • Thermal capability: >200 C
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