With the popularization of portable electronic products, low-power memory components have gradually received attention. Among random access memory technologies, the write energy of ferroelectric memory is the most advantageous (<2 mJoule), which is different from resistive memory. Phase change type/Magnetic components are read resistance components, and ferroelectric components are capacitive components with inherently low leakage current characteristics.
Applications & Benefits
The new ferroelectric material hafnium oxide (HfO2) has become the main trend since 2011:
- The combination of ferroelectric component (FE-MIM) and mainstream CMOS technology is ferroelectric random access memory FRAM:
- Low voltage planar ferroelectric memory technology (2D-FRAM)
- High-density three-dimensional memory technology (3D-FRAM)