Technology Overview
X-Ray Metrology for Front-End 2 nm GAA Processm.
A new generation of X-ray metrology was developed with atomic-level precision for monitoring the new nanoscale GAA (Gate All-Around) structure of semiconductor 2 nm process. It is the milestone for measuring the semiconductor critical dimension (CD) variations as small as 1 to 2 nm. ITRI is developing the reflection X-ray measurement technology with the local system integration leaders and key component manufacturers.
Applications & Benefits
The reflection X-ray measurement can observe line width with 0.1 nm precision to address the needs for the 2 nm process sites including fin formation, etch back, inner spacer, and nanowire release.