Technology Overview
High Voltage SiC MOSFET.
ITRI’s high-voltage SiC MOSFET power device delivers outstanding performance with low on-state resistance and high current capacity. This is achieved through a high-density cell layout and a chip design that ensures uniform thermal distribution, resulting in a lower specific on-state resistance. In addition, ITRI’s SiC MOSFET provides high current output while making power conversion systems more compact and efficient.
Technology Features
1. 1700 V 80 A SiC MOSFET
- Threshold voltage: VGS(th) = 3.5 V
- Large drain current: ID = 80 A at Tc = 25 °C
- Low specific on-state resistance: Ron,sp ≤ 8 mΩ‧cm2
2. 1200 V 100 A SiC MOSFET
- Threshold voltage: VGS(th) = 3 V
- Large drain current: ID = 100 A at Tc = 25 °C
- Low specific on-state resistance: Ron,sp ≤ 3.5 mΩ‧cm2