Technology Overview
6”1200V/1700V SiC MOSFET Wafer.
For ITRI’s 1200V and 1700V SiC chip, ITRI has successfully provided good performance of low on-state resistance and high drain current by optimized chip/epi design and uniform thermal distribution design.
Technology Features
1. 1200V 80A SiC MOSFET
- Threshold voltage: VGS(th) = 3 V
- Large drain current: ID = 80 A at Tc = 25°C
- Low specific on-resistance: Ron,sp ≤ 4.7mΩ‧cm2
2. 1700V 60A SiC MOSFET
- Threshold voltage: VGS(th) = 3.5 V
- Large drain current: ID = 60 A at Tc = 25°C
- Low specific on-resistance: Ron,sp ≤ 9mΩ‧cm2